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Raytheon wins $15m four-year DARPA THREADS contract to boost RF sensors
What happened
Raytheon has been awarded a $15 million, four-year DARPA contract to develop high-power-density gallium nitride (GaN) transistors for RF sensors, aiming for 16x higher output power without increased operating temperature. This is a defense-focused R&D project under the DARPA THREADS program. Neutral: This is a long-term, low-volume R&D effort unlikely to impact commercial GaN supply, demand, or pricing in the near-to-medium term.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN RF Transistors
Raytheon Technologies (RTX)
R&DdefenseGaN
Source and time
Source: Semiconductor Today · 11/16/2023 · View original source
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