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EPC launches first GaN FET with 1mΩ on-resistance

What happened

Efficient Power Conversion Corp (EPC) has launched the 100V EPC2361 GaN FET, claiming a record-low 1mΩ on-resistance and double the power density of its prior-generation products. This represents a technical milestone in GaN power semiconductor performance, primarily targeting high-efficiency power conversion applications. Neutral: While this advances GaN technology, it is a standard product launch with no immediate, specific impact on supply, demand, or pricing for the broader component trading market.

Impact and signal

Low impactImpact score: 15/100

Affected components and suppliers

GaN FET

Efficient Power Conversion Corp

EPC2361

product-launchganpower-density

Source and time

Source: Semiconductor Today · 3/1/2024 · View original source

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EPC launches first GaN FET with 1mΩ on-resistance

What happened

Impact and signal

Affected components and suppliers

Source and time

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