NuAxiSemiconductor trade intelligence

Vishay selects Aixtron’s G10-SiC multi-wafer batch technology

What happened

Vishay Intertechnology has selected Aixtron's G10-SiC multi-wafer CVD epitaxy platform for its in-house silicon carbide production at its Newport fab in Wales. This equipment supports dual wafer sizes (9x150mm or 6x200mm) for power device manufacturing. Neutral: This is a long-term capacity build-out for a specialized process, with no immediate impact on market supply, pricing, or inventory of discrete components.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

SiC Epitaxial WafersSiC Power Devices

Vishay Intertechnology IncAixtron SE

capacity-expansionequipment-orderSiC

Source and time

Source: Semiconductor Today · 4/24/2024 · View original source

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Vishay selects Aixtron’s G10-SiC multi-wafer batch technology

What happened

Impact and signal

Affected components and suppliers

Source and time

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