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WIN releases moisture rugged 0.1µm GaAs pHEMT technology
What happened
WIN Semiconductors announced the beta release of its PP10-29 moisture rugged 0.1µm GaAs pHEMT technology. This is a process development for specialized RF components used in infrastructure and networking markets. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trader inventory decisions.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GaAs pHEMT
WIN Semiconductors Corp
foundryprocess-nodeGaAs
Source and time
Source: Semiconductor Today · 6/17/2024 · View original source
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