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Cornell and Lit Thinking working on DARPA-funded project to develop AlN-based PiN diodes with low on-state resistance

What happened

Cornell University and Lit Thinking are working on a DARPA-funded project to develop AlN-based PiN diodes with low on-state resistance, aiming to overcome technical barriers limiting aluminum nitride's adoption. This research targets next-generation power electronics for defense and high-performance applications. Neutral: This is a long-term R&D milestone with no immediate impact on commercial supply, pricing, or trading dynamics for existing components.

Impact and signal

Low impactImpact score: 8/100

Affected components and suppliers

Wide-Bandgap SemiconductorsPower Electronics
R&DDARPAWide-Bandgap

Source and time

Source: Semiconductor Today · 8/29/2024 · View original source

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