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EPC launches EPC2367 100V GaN FET with 1.2mΩ on-resistance

What happened

EPC has launched the EPC2367, a next-generation 100V GaN FET with 1.2mΩ on-resistance, targeting higher performance and lower system costs in power conversion applications. This is a routine product refresh in the competitive GaN power semiconductor market. Neutral: This launch represents incremental technology advancement but does not indicate a supply shock or immediate demand shift for existing components.

Impact and signal

Low impactImpact score: 20/100

Affected components and suppliers

GaN FET

Efficient Power Conversion Corp

EPC2367

product-launchgan-fet

Source and time

Source: Semiconductor Today · 3/18/2025 · View original source

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EPC launches EPC2367 100V GaN FET with 1.2mΩ on-resistance

What happened

Impact and signal

Affected components and suppliers

Source and time

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