NuAxiSemiconductor trade intelligence
[News] Only 1nm, Record-Low Power Consumption: Peking University Team Achieves Chip Breakthrough
What happened
A Peking University research team published a paper demonstrating a 1nm gate-length ferroelectric transistor operating at 0.6V with energy consumption of 0.45 fJ/μm. This is a lab-stage R&D breakthrough in device physics aimed at future AI chip architectures. Neutral: No near-term impact on component supply, pricing, or trading decisions.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Ferroelectric TransistorNon-volatile Memory
rd-milestonelow-powerai-hardware
Source and time
Source: TrendForce · 3/1/2026 · View original source
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